Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT

Product Details
Application: Electronic Devices, Power Supply, Semiconductors
Material: AlN
Process: Direct Bonded Copper
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  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
  • Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
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Basic Info.

Model NO.
INC-170
Thickness
Customized
Flexural Strength
450MPa
Surface Roughness
Ra 0.3-0.5
Color
Grey
Coefficient of Thermal Expansion
4.8
Thermal Conductivity
(25°c) 180 W/Mk
Water Absorption
0
Processing Service
Moulding
Density
3.31g/cm3
Melting Point
2500
Type
Plate
Transport Package
Standard Safety Cartons with Plastic Foams
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China
Production Capacity
300000 Piece/Pieces Per Month

Product Description

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests.

Aluminum Nitride Ceramic Substrates has a well equipped and modern tool room dedicated to the manufacture and maintenance of customers tooling. By keeping this process in house we are able to keep not only simple but extremely complex tooling costs to a minimum, coupled with shorter lead times.
 
Regular specification of AlN substrate and wafer size:
 
Thickness(mm)
L*W( mm)
0.385
2″* 2″
50.8mm*50.8mm
3″* 3″
76.2mm*76.2mm
4″* 4″
101.6mm*101.6mm
4.5″* 4.5″
114.3mm*114.3mm
0.5
0.635
1
Thickness(mm)
Diameter(mm)
1
Φ16
Φ19
Φ20
Φ26
Φ30
Φ35
Φ40
Φ45
Φ50
Φ52
Φ60
Φ75
Φ80
1.2
1.5
2
2.5
AlN ceramic substrate features:
1) Wear -resisting
2) Resistant high temperatures
3) Good chemical stability
4) Electrical insulator
5) Hardness and low thermal expansion
6) It is widely used for power electronic devices.
7) High thermal conductivity
8) High heat conductivity
 
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
 
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT

Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
Innovacera Laser Cutting Ain Ceramic Substrates for Power Modules Mosfet IGBT
 
Aluminium Nitride Material Properties
Material
ALN
Item No.
INC-AN180
INC-AN200
INC-AN220
Color
Gray
Gray
Beige
Main Content
96%ALN
96%ALN
97%ALN
Main Characteristics
High Thermal Conductivity,Excellent Plasma Resistance
Main Applications
Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density
3.30
3.30
3.28
Water Absorption
0
0
0
Vickers Hardness(Load 500g)
10.0
9.5
9.
Flexural Strength
>=350
>=325
>=280
Compressive Strength
2500
2500
-
Young' Modulus of Elasticity
320
320
320
Poisson's Ratio
0.24
0.24
0.24
Fracture Toughness
-
-
-
Coefficient Linear Thermal Expansion
40-400degree
4.8
4.6
4.5
Thermal Conductivity
20degree
180
200
220
Specific Heat
0.74
0.74
0.76
Thermal Shocking Resistance
-
-
-
Volume Resistivity
20degree
>=10-14
>=10-14
>=10-13
Dielectric Strength
>=15
>=15
>=15
Dielectric Constant
1MHz
9
8.8
8.6
Loss Tangent
*10-4
5
5
6

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