New Material Innovacera Aluminum Nitride Aln Ceramic Substrate Thermally Conductive Material and Insulator

• Application: Aerospace, Electronics, Medical, Refractory
• Type: Ceramic Part
• Size: Customized
• Dielectric Strength: 18.45
• Dielectric Constant: 8.56
• Thermal Shock Resistance: 382.7
• Model NO.: NN-175625
• Thermal Conductivity: >170
• Processing Service: Bending, Welding, Cutting, Punching
• Density: 3.335
• Certification: ISO9001:2008/RoHS
• Name: Innovacera
• Transport Package: Carton Packing
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China

Product Description

Polished Aluminum Nitride (ALN) Ceramic Wafer/Innovacera

The aluminum nitride (ALN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low  dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests.
 

PRODUCT PERFORMANCE

- High thermal conductivity, high flexural strength, high temperature
- Good electrical insulation
- Low dielectric constant and loss
- Able to be laser drilled, metallized, plated and brazed

 

 

Regular Dimensions of AlN Substrate/Wafer
Thickness(mm)	Length*Width(mm)
0.385	2″* 2" 50.8*50.8 mm		3″* 3″ 76.2*76.2mm		4″* 4″ 101.6*101.6mm		4.5″* 4.5″ 114.3*114.3mm
0.5
0.635
1.0
Diameter(mm)
1.0	Φ16 Φ19	Φ20 Φ26	Φ30 Φ35	Φ40 Φ45	Φ50 Φ52	Φ60	Φ75	Φ80
PS: Other dimensions which are not listed are available upon your requests.

Product Features:

1.Uniform microstructure
2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives
3.High electrical resistivity
4.Thermal expansion coefficient close to that of Silicon
5.Resistance to corrosion and erosion
6.Excellent thermal shock resistance
7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation occurs around 780°C; the surface layer protects the bulk up to 1380°C).

 

Application:

 

 

 

- RF / Microwave Components

- Power Modulus

- Power Transformers

- High Power LED Package

 

 

- Laser Diode Sub-mounts

- LED Chip Sub-mount

- Microelectronic Packages

- Transistors
 

- High Thermal Conductivity Substrates

for LED & Power Electronics

- Substrates for Power Electronics
 

Material Properties of Aluminum Nitride Substrate/Wafer
Property Content	Property Index
Density(g/cm³)	3.335
Resistance to Thermal Shock	No Cracks
Thermal conductivity(30, W/m.k)	≥170
Linear expansion coefficient (/, 5/min, 20-300)	2.805×10­6
Flexural strength (MPa)	382.7
Volume Resistivity (Ω.cm)	1.4×1014
Dielectric constant(1MHz)	8.56
Chemical Durability (mg/cm²)	0.97
Dielectric strength (KV/mm)	18.45
Surface roughness Ra(μm)	0.3~0.5
Camber (length‰)	≤2‰
Appearance/ Color	Dense/ Dark Gray
Note: The general characteristics of the materials described above were derived from laboratory test performed by Innovacera from time on sample quantities. Actual characteristics of production lots may vary.

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