99.5% Hot Pressed Aluminum Nitride (HPAN) Ceramics Plate Wafer Substrate for Semiconductor

• Application: Aerospace, Electronics, Medical, Industrial Ceramic
• Type: Ceramic Plates
• Mechanical Strength: 450MPa
• Size: Customer′s Drawing
• Color: Black
• Heat Conductivity Coefficient: 100-140W/M.K
• Insulating Property: 15kv/mm
• Water Absorption: 0 %
• Density: ≥3.32g/cm3
• Advantage: Corrosion Resistance
• Product Name: Aluminum Nitride
• Certificate: RoHS
• Transport Package: Carton Packing
• Specification: Customized
• Trademark: IINNOVACERA
• Origin: Fujian, China
• Production Capacity: 10000 Piece/Pieces Per Month

Product Description

 

Products Description

Hot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.

Hot Pressed Alumina Nitride Properties:

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	300-460
Fracture Toughness	MPa m1/2	2.75-6.0
Thermal Conductivity (20 °C)	W/m K	80-140
Coefficient of Thermal Expansion	1 x 10-6/°C	3.3-5.5
Maximum Use Temperature	°C	800
Dielectric Strength (6.35mm)	ac-kV/mm	16.0-19.7
Dielectric Loss	1MHz, 25 °C	1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)	Ω-cm	1013 to 1014

 

Features
>High thermal conductivity
>Expansion coefficient can match with semiconductor silicon chips
>High insulation resistance and voltage withstand strength
>Low dielectric constant and low dielectric loss
>High mechanical strength

Maximum Size of Hot Press Sintering

Length500 x width500 x height< 350 mm

Outer diameter 500 x height < 500 mm

We can provide Hot Pressed Aluminum Nitride (HPAN) as required.

 

 

Packing and Storage
Standard Packing: Sealed bags in carton boxes. Special package is available on request.