0.1-0.5mm Copper Thickness Si3n4 Silicon Nitride Amb Substrate for High Power Device Packaging

• Application: Aerospace, Ceramic Decorations, Medical, Amb Substrate
• Compressive Strength: 2300MPa
• Coating Thickness: 8-30μm
• Model NO.: AA INC-AMB20310
• Coating Layer: Mo/Mn
• Plated Layer: Nickel/Copper/Gold
• Thermal Conductivity: 25W/(M.K)
• Plating Thickness: 2-9μm
• Max. Use Temperature: 1600ºC
• Density: 3.7g/cm3
• Material Composition: Alumina, Al2O3
• Speciality: High Insulation, High Strength
• Type: Insulating Ceramics
• Transport Package: Standard Cartons with Foam
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China
• Production Capacity: 10000 Piece/Pieces Per Month

Product Description

 

 

Silicon Nitride AMB Ceramic Substrate is a method to realize the bonding of ceramic and metal by reacting a small amount of active elements Ti and Zr in filler metal with ceramics to form a reaction layer which can be wetted by liquid filler metal.

 

Advantage:

* The combination is achieved by chemical reaction between ceramic and active metal solder paste at high temperature, so its bonding strength is higher and reliability is better;
* Could have different thickness of copper on one plate;
* Environmental frindly;
* Strong cold and heat resistance;
* Easy full automation, production efficiency high, low production cost;
* Copper thickness 0.1-0.5mm,very suitable for high power device packaging.

 

Specification

>Metallization thickness: 25 ±10um >Nickel thickness:2~10um; >Pin full strength: 4200kgf/cm2 avg. (at Φ3.0mm pin)

 

Material	Item	Value
Si3N4	Composition	96%SiN
		Thickness (mm)	0.2,0.32,0.35,0.635,0.4-1.5
		Density(g/cm3)	3.2±0.25
		Thermal Conductivity (20°C, W/m·k)	85+
		Flexural Strength (MPA)	700-800
		Dielectric Constant (IMHz)	8
		Dielectric loss (IMHz)	0.001
		Dielectric Strength (KV/mm)	20
		Volume Resistivity (Ω/CM)	1*1014
ALN	Composition	96%ALN
		Thickness (mm)	0.25,0.32,0.635
		Density(g/cm3)	3.3
		Thermal Conductivity (20°C, W/m·k)	170+
		Flexural Strength (MPA)	350
		Dielectric Constant (IMHz)	9
		Dielectric loss (IMHz)	0.0005
		Dielectric Strength (KV/mm)	20
		Volume Resistivity (Ω/CM)	1014
Copper	Material	Oxygen-free copper
		Purity (%)	99.99
		Hardness( HV)	60-110
		Conductivity (MS/m)	58.6
		Thickness (mm)	1.2,1.0,0.8,0.5,0.4,0.3,0.25,0.2
AMB Substrate	Largest size (mm)	190*140
		Line Spacing (mm)	≥0.5
		Line Width (mm)	customized
		Peel strength of copper layer (minimum) (N/mm)	10
		Solderability(%)	95%
		Delivery method	Small pieces or panel
		Surface states (um)	CU/AU/AG

 

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