Innovacera Hot Pressed Alumina Nitride Disc Wafer for Semiconductor

• Application: Aerospace, Electronics, Medical, Refractory, IGBT, Powe Modules, Electronics
• Type: Ceramic Parts
• Flexural Strength: 450MPa
• Surface Roughness: 0.3-0.6
• Color: Light Grey
• Dielectric Constant: 8-10
• Dimension: Customized
• Thermal Conductivity: >(25°c) 170 W/Mk
• Processing Service: Moulding
• Density: >3.33G/Cm3
• Feature: High Thermal Conductivity
• Transport Package: Standard Safety Cartons with Plastic Foams
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China
• Production Capacity: 200000 Piece/Pieces Per Month

Product Description

 

Hot Pressed Aluminum Nitride Ceramic Disc / Wafer

Hot pressed aluminum nitride (AlN) is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity. The applications for hot pressed AlN typically involve rigorous or abrasive environments and high-temperature thermal cycling.

 

Advantages of Hot pressing ALN Aluminum nitride ceramic: - High purity - Electrical insulator - High thermal conductivity - Critical thermal management material - Reduced Particulate Generation - Corrosion/Erosion Resistance - Controlled Electrical Properties

 

Typical Application: - Cover plates and MRI equipment(Magnetic Resonance Imaging) - High-power detectors, plasma generators - Electrostatic chucks and heating plates for semiconductors and integrated circuits - Infrared and microwave window material

Below is the properties of the pressed alumina nitride:

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	300-460
Fracture Toughness	MPa m1/2	2.75-6.0
Thermal Conductivity (20 °C)	W/m K	100-170
Coefficient of Thermal Expansion	1 x 10-6/°C	3.3-5.5
Maximum Use Temperature	°C	800
Dielectric Strength (6.35mm)	ac-kV/mm	16.0-19.7
Dielectric Loss	1MHz, 25 °C	1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)	Ω-cm	1013 to 1014

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