Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole

Product Details
Application: Electronic Devices, Semiconductors, Industrial Ceramic
Material: Aluminum Nitrid
Volume Resistance: 10(13) Ω`Cm
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  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
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  • Overview
  • Product Parameters
  • Detailed Photos
Overview

Basic Info.

Color
Grey
Coefficient of Thermal Expansion
4.8X10(-6)mm/ºC
Thermal Conductivity
(25°c) 180 W/Mk
Water Absorption
0
Processing Service
Moulding
Density
>3.3G/Cm3
Flexural Strength
>310MPa
Surface Roughness
Ra 0.3-0.5
Melting Point
2500
Part No.
to-3p
Type
Ceramic Plates
Transport Package
Carton Packing
Specification
25mm*20mm*1mm
Trademark
INNOVACERA
Origin
Fujian, China

Product Description

 
Aluminum nitride ceramic thermal insulator pads are ceramic materials with outstanding properties such as high thermal conductivity and high electrical resistance. In addition, it is featured advantages such as high hardness, corrosion resistance,low dielectric constant and dielectric loss, and low CTE. Aluminum nitride ceramics have excellent thermal conductivity (7-10 times that of alumina ceramics), as the thermal expansion coefficient of silicon is similar, as a new generation of ceramic materials, more and more people pay attention to it.
 
Product Name: Aluminum Nitride Ceramic Thermal Pads For MOSFET Transistor IGBT Transistor Heat Sink
Part No.: TO-3P TO-220 TO247 TO-254 TO-257 TO-258 TO-264
 
Application: for MOS Transistor IGBT Transistor Heat Sink Often used in electrical and electronic fields requiring heat conduction, heat dissipation, insulation, high temperature resistance,high voltage breakdown resistance, high thermal conductivity, good stability.
 
Product Advantages:
> Excellent thermal conductivity (7-10 times of alumina ceramics) > Low dielectric constant
> Dielectric loss
> Reliable insulation performance
> Excellent mechanical properties
> Non-toxic > High temperature resistance
> Chemical corrosion resistance
 
Application: communication devices, high brightness LED, power electronic devices and other industries.
 
Aluminum Nitride Thermal Pad Information
PS:    K -  Hole Diameter     T  -  Thickness      24  -  Aluminum Nitride
Part No.
Material
Specification
Others
TO-3P-K3.8-T0.6-24
AlN
25*20*0.635mm
with Hole
TO-3P-K3.8-T1-24
AlN
25*20*1mm
with Hole
TO-3P-T0.6-24
AlN
25*20*0.635mm
without holes
TO-3P-T1-24
AlN
25*20*1mm
without holes
TO-220-T0.6-24
AlN
20*14*0.635mm
without holes
TO-220-T1-24
AlN
20*14*1mm
without holes
TO-220-K3.2-T0.6-24
AlN
20*14*0.635mm
with Hole
TO-220-K3.2-T1-24
AlN
20*14*1mm
with Hole
TO-247-T0.6-24
AlN
22*17*0.635mm
without holes
TO-247-T1-24
AlN
22*17*1mm
without holes
TO-247-K3.7-T0.6-24
AlN
22*17*0.635mm
with Hole
TO-247-K3.7-T1-24
AlN
22*17*1mm
with Hole
TO-254-T0.6-24
AlN
34*24*0.635mm
without holes
TO-254-T1-24
AlN
34*24*1mm
without holes
TO-254-K3.8-T0.6-24
AlN
34*24*0.635mm
with Hole
TO-254-K3.8-T1-24
AlN
34*24*1mm
with Hole
TO-257-T0.6-24
AlN
40*28*0.635mm
without holes
TO-257-T1-24
AlN
40*28*1mm
without holes
TO-258-T0.6-24
AlN
50.8*50.8*0.635mm
without holes
TO-258-T1-24
AlN
50.8*50.8*1mm
without holes
TO-264-K3.4-T0.6-24
AlN
28*22*0.635mm
with Hole
TO-264-K3.4-T1-24
AlN
28*22*1mm
with Hole
TO-264-T0.6-24
AlN
28*22*0.635mm
without holes
TO-264-T1-24
AlN
28*22*1mm
without holes
Product Parameters
Properties
Properties
Unit
INC-AN180
INC-AN200
INC-AN220
Color
 
Gray
Gray
Beige
Density
g/cm3)
3.3
3.3
3.28
Thermal conducitivity
(W/m.K)
in 20°C
180
200
220
Bending strength
(Mpa
>=350
>=325
>=280
Insulation
(KV/mm)
31
27
27
Dielectric
 
9
8.8
8.6
CTE (10-6)
 
4.8
4.6
4.5

Available Sizes and Machining Capability
 
Availability
Sizes (mm)
Machining Capability
Sizes (mm)
Plate
Φ350×30
Hole diameter
Φ0.03 or more
Rod
Φ100×200
Hole depth
300 or less
Groove width
0.05 or more
Max. hole number
3,000 (approx.)
Max. step height
30
Thread size
M2 or more
 
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
 
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole


 
Detailed Photos
 
 
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
 
Factory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with HoleFactory Price Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
 

 

 

 

 

 

 
 
 

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