6inch 8inch 6" 8" Polished or Lapped Sides Aln Aluminum Nitride Wafer for Semiconductors Manufacturing

• Application: Aerospace, Electronics, Medical, Refractory
• Type: Ceramic Part
• Size: 6" 8" 6inch 8inch
• Color: Gray
• Main Content: 96%Aln, 97%Aln
• Main Characteristics: High Thermal Conductivity,Excellent Plasma Resista
• Main Applications: Heat Dissipating Parts,Plasma Resistance Parts
• Bulk Density: 3.30
• Vickers Hardness(Load 500g): 10.0
• Compressive Strength: 2500
• Young’ Modulus of Elasticity: 320
• Poisson’s Ratio: 0.24
• Specific Heat: 0.74
• Volume Resistivity: >=10-14
• Dielectric Strength: >=15
• Loss Tangent: 5 *10-4
• Transport Package: Carton Packing
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China

Product Description

 

 

 

6inch 8inch 6" 8" Polished or Lapped Sides AlN Aluminum Nitride Wafer Substrates for Semiconductors Manufacturing

Aluminum Nitride Wafer Substrates play an essential role in the semiconductor industry. One of the key reasons for their popularity is their thermal profile, which closely matches that of silicon. This similarity makes AIN substrates an excellent choice for semiconductor applications where thermal management is critical. Innovacera, a leading provider of these substrates,offers Aluminum Nitride Wafer Substrates in various diameters, ranging from 2 inches to 8 inches, with the 6-inch and 8-inch sizes being the most commonly used.
 

Aluminum Nitride Features Include:
>High Thermal Conductivity
>High Electrical Insulation
>Low Dielectric Constant
>Mechanical Strength and Stability
>Corrosion Resistance
Chemical and Thermal Stability

The unique properties of Aluminum Nitride Wafer Substrates make them highly sought after in various semiconductor applications.

The substrates are particularly valued in:
>Power Electronics
>RF and Microwave Devices
>LED Manufacturing
>Wafer Bonding Technology

Aluminum Nitride Wafer Substrates are indispensable in the modern semiconductor industry, offering a combination of thermal conductivity, electrical insulation, and mechanical strength that few materials can match. Innovacera's range of Aluminum Nitride (AIN) wafers, available in various sizes and customized options, provide the reliability and performance necessary for high-demand applications. As the semiconductor industry continues to advance, the role of AIN substrates will only become more critical, ensuring that devices remain efficient, durable, and capable of meeting the ever-growing demands of technology.
 

 

Aluminium Nitride Material Properties
Material		ALN
Item No.		INC-AN180	INC-AN200	INC-AN220
Color		Gray	Gray	Beige
Main Content		96%ALN	96%ALN	97%ALN
Main Characteristics		High Thermal Conductivity,Excellent Plasma Resistance
Main Applications		Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density		3.30	3.30	3.28
Water Absorption		0	0	0
Vickers Hardness(Load 500g)		10.0	9.5	9.
Flexural Strength		>=350	>=325	>=280
Compressive Strength		2500	2500	-
Young' Modulus of Elasticity		320	320	320
Poisson's Ratio		0.24	0.24	0.24
Fracture Toughness		-	-	-
Coefficient Linear Thermal Expansion	40-400degree	4.8	4.6	4.5
Thermal Conductivity	20degree	180	200	220
Specific Heat		0.74	0.74	0.76
Thermal Shocking Resistance		-	-	-
Volume Resistivity	20degree	>=10-14	>=10-14	>=10-13
Dielectric Strength		>=15	>=15	>=15
Dielectric Constant	1MHz	9	8.8	8.6
Loss Tangent	*10-4	5	5	6