Hot Pressing Aluminum Nitride Used for Semiconductor Fabrication Equipments

• Application: Aerospace, Electronics, Medical, Refractory, IGBT, Powe Modules, Electronics
• Type: Ceramic Parts
• Flexural Strength: 450MPa
• Surface Roughness: 0.3-0.6
• Color: Light Grey
• Dielectric Constant: 8-10
• Dimension: Customized
• Thermal Conductivity: >(25°c) 170 W/Mk
• Processing Service: Moulding
• Density: >3.33G/Cm3
• Feature: High Thermal Conductivity
• Transport Package: Standard Safety Cartons with Plastic Foams
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China
• Production Capacity: 200000 Piece/Pieces Per Month

Product Description

Hot Pressed Aluminum Nitride Ceramic Disc / Wafer

Hot pressing Aluminum Nitride (AlN) ceramics are used as wafer heating plates and wafer holding electrostatic chucks in semiconductor fabrication equipments.

 

Advantages of Hot pressing ALN Aluminum nitride ceramic: - High purity - Electrical insulator - High thermal conductivity - Critical thermal management material - Reduced Particulate Generation - Corrosion/Erosion Resistance - Controlled Electrical Properties

 

Typical Application: - Cover plates and MRI equipment(Magnetic Resonance Imaging) - High-power detectors, plasma generators - Electrostatic chucks and heating plates for semiconductors and integrated circuits - Infrared and microwave window material

Below is the properties of the pressed alumina nitride:

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	300-460
Fracture Toughness	MPa m1/2	2.75-6.0
Thermal Conductivity (20 °C)	W/m K	100-170
Coefficient of Thermal Expansion	1 x 10-6/°C	3.3-5.5
Maximum Use Temperature	°C	800
Dielectric Strength (6.35mm)	ac-kV/mm	16.0-19.7
Dielectric Loss	1MHz, 25 °C	1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)	Ω-cm	1013 to 1014