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  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
  • Wear Resistance MOS Transistor IGBT Aln Aluminum Nitride Thermal Pad Substrate for Cooling Pad with Hole
Application: Industrial Ceramic
Type: Ceramic Plates
Volume Resistance: 10(13) Ω`Cm
Color: Grey
Coefficient of Thermal Expansion: 4.8X10(-6)mm/ºC
Thermal Conductivity: (25°c) 180 W/Mk
Samples:
US$ 5/Piece 1 Piece(Min.Order)
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