Hot Pressed Aluminum Nitride Ceramic Black Wafer

• Application: Aerospace, Electronics, Medical, Refractory, Industrial Ceramic
• Type: Ceramic Parts
• Maximum Use Temperature: 800°c
• Thermal Conductivity (20 °c): 80 - 100 W/M K
• Dielectric Strength (6.35mm): 16.0 - 19.7 AC-Kv/mm
• Volume Resistivity (25°c): 1013 to 1014 ( Ω-Cm )
• Fracture Toughness, Kic: 2.75 - 6.0 MPa M1/2
• Flexural Strength, Mor (20 °c): 300 - 460 MPa
• Coefficient of Thermal Expansion: 3.3 - 5.5 1 X 10-6/°c
• Processing Service: Moulding
• Dielectric Loss (Tan): 1 X 10-4 to 5 X 10-4
• Transport Package: Carton Packing
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China
• Production Capacity: 200000 Piece/Pieces Per Month

Product Description

Hot Pressed Aluminum Nitride Ceramic Black Wafer

Hot pressed alumiunm nitride is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity.The application for hot pressed AlN typically involve rigorous or abrasive environments and high-tempreature thermal cycling.

 

Application:

--Semiconductor Heaters --Etching Machine

Below is the properties of the pressed alumina nitride.

Property	Units	Value
Flexural Strength, MOR (20 °C)	MPa	300-460
Fracture Toughness	MPa m1/2	2.75-6.0
Thermal Conductivity (20 °C)	W/m K	80-140
Coefficient of Thermal Expansion	1 x 10-6/°C	3.3-5.5
Maximum Use Temperature	°C	800
Dielectric Strength (6.35mm)	ac-kV/mm	16.0-19.7
Dielectric Loss	1MHz, 25 °C	1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)	Ω-cm	1013 to 1014

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