High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

• Application: Electronic Devices, Power Supply, Semiconductors
• Material: AlN
• Process: Direct Bonded Copper
• Thickness: Customized
• Flexural Strength: 450MPa
• Surface Roughness: Ra 0.3-0.5
• Color: Grey
• Coefficient of Thermal Expansion: 4.8
• Thermal Conductivity: (25°C) 180 W/Mk
• Water Absorption: 0
• Processing Service: Moulding
• Density: 3.31g/cm3
• Melting Point: 2500
• Type: Plate
• Transport Package: Standard Safety Cartons with Plastic Foams
• Specification: Customized
• Trademark: INNOVACERA
• Origin: Fujian, China
• Production Capacity: 200000 Piece/Pieces Per Month

Product Description

The aluminum nitride (AlN) ceramic has high thermal conductivity(5-10 times as the alumina ceramic), low dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic, high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is widely used in communication components, high power led, power electronic devices and other fields.Special spec products can be produced upon requests.

Aluminum Nitride Ceramic Substrates has a well equipped and modern tool room dedicated to the manufacture and maintenance of customers tooling. By keeping this process in house we are able to keep not only simple but extremely complex tooling costs to a minimum, coupled with shorter lead times.

 

Regular specification of AlN substrate and wafer size:

 

Thickness(mm)	L*W( mm)
0.385	2″* 2″ 50.8mm*50.8mm		3″* 3″ 76.2mm*76.2mm		4″* 4″ 101.6mm*101.6mm		4.5″* 4.5″ 114.3mm*114.3mm
0.5
0.635
1
Thickness(mm)	Diameter(mm)
1	Φ16 Φ19	Φ20 Φ26	Φ30 Φ35	Φ40 Φ45	Φ50 Φ52	Φ60	Φ75	Φ80
1.2
1.5
2
2.5

AlN ceramic substrate features:
1) Wear -resisting
2) Resistant high temperatures
3) Good chemical stability
4) Electrical insulator
5) Hardness and low thermal expansion
6) It is widely used for power electronic devices.
7) High thermal conductivity
8) High heat conductivity

 

 

 

Aluminium Nitride Material Properties
Material		ALN
Item No.		INC-AN180	INC-AN200	INC-AN220
Color		Gray	Gray	Beige
Main Content		96%ALN	96%ALN	97%ALN
Main Characteristics		High Thermal Conductivity,Excellent Plasma Resistance
Main Applications		Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density		3.30	3.30	3.28
Water Absorption		0	0	0
Vickers Hardness(Load 500g)		10.0	9.5	9.
Flexural Strength		>=350	>=325	>=280
Compressive Strength		2500	2500	-
Young' Modulus of Elasticity		320	320	320
Poisson's Ratio		0.24	0.24	0.24
Fracture Toughness		-	-	-
Coefficient Linear Thermal Expansion	40-400degree	4.8	4.6	4.5
Thermal Conductivity	20degree	180	200	220
Specific Heat		0.74	0.74	0.76
Thermal Shocking Resistance		-	-	-
Volume Resistivity	20degree	>=10-14	>=10-14	>=10-13
Dielectric Strength		>=15	>=15	>=15
Dielectric Constant	1MHz	9	8.8	8.6
Loss Tangent	*10-4	5	5	6