• High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
  • High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
  • High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
  • High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
  • High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
  • High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

Application: Aerospace, Electronics, Medical, Refractory, Electrical Components
Type: Industrial Parts
Flexural Strength: 450MPa
Hardness (Vickers): 11gpa
Keyword: Aln Substrate
Color: Grey
Manufacturer/Factory & Trading Company

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Fujian, China
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Basic Info.

Thermal Conductivity
(25°c) 180 W/Mk
Processing Service
Moulding
Density
3.31g/cm3
Specific Heat
750 J/Kg.K
Transport Package
Standard Safety Cartons with Plastic Foams
Specification
customized
Trademark
INNOVACERA
Origin
Fujian, China
Production Capacity
200000 Piece/Pieces Per Month

Product Description

High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

 

 

 

 

Polished Aluminum Nitride (ALN) Ceramic Plate

 

The aluminum nitride (AlN) ceramic has high thermal conductivity (5-10 times as the alumina ceramic), low

 

dielectric constant and dissipation factor, good insulation and excellent mechanical properties, non-toxic,

 

high thermal resistance, chemical resistance ,and the linear expansion coefficient is similar with Si,which is

 

widely used in communication components, high power led, power electronic devices and other

 

fields.Special spec products can be produced upon requests.

 

 

Product Features

 

1.Uniform microstructure


2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives


3.High electrical resistivity


4.Thermal expansion coefficient close to that of Silicon


5.Resistance to corrosion and erosion


6.Excellent thermal shock resistance


7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation

 

occurs around 780°C; the surface layer protects the bulk up to 1380°C).

 

 
Regular Dimensions of AlN Substrate/Wafer
 
 
 
 
 
 
 
 
 
Thickness(mm)
Length*Width(mm)
 
 
 
 
 
 
 
 0.385
 
2″* 2"
50.8*50.8 mm
 
 
3″* 3″
76.2*76.2mm
 
 
4″* 4″
101.6*101.6mm
 
 
4.5″* 4.5″
114.3*114.3mm
 
 0.5
 
 
 
 
 
 
 
 
 0.635
 
 
 
 
 
 
 
 
 1.0
 
 
 
 
 
 
 
 
Diameter(mm)
 
 
 
 
 
 
 
 
 1.0
Φ16
Φ19
Φ20
Φ26
Φ30
Φ35
Φ40
Φ45
Φ50
Φ52
Φ60
Φ75
Φ80
PS: Other dimensions which are not listed are available upon your requests.
 
 
 
 
 
 
 
 
 
Material Properties of Aluminum Nitride Substrate/Wafer
 
 
Property Content
Property Index
Density(g/cm³)
3.335
Resistance to Thermal Shock
No Cracks
Thermal conductivity(30, W/m.k)
≥170
Linear expansion coefficient
(/, 5/min, 20-300)
2.805×10­6
Flexural strength (MPa)
382.7
Volume Resistivity (Ω.cm)
1.4×1014
Dielectric constant(1MHz)
8.56
Chemical Durability (mg/cm²)
0.97
Dielectric strength (KV/mm)
18.45
Surface roughness Ra(μm)
0.3~0.5
Camber (length‰)
≤2‰
Appearance/ Color
Dense/ Dark Gray
Note: The general characteristics of the materials described above were derived from laboratory test performed by Innovacera from time on sample quantities. Actual characteristics of production lots may vary.
 
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

 

 
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

 

 
Application
 
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
 
 
 
 
- RF / Microwave Components
- Power Modulus
- Power Transformers
- High Power LED Package
 
 
 
 
- Laser Diode Sub-mounts
- LED Chip Sub-mount
- Microelectronic Packages
- Transistors
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor

 

 

 

 

 

- High Thermal Conductivity Substrates

 

for LED & Power Electronics

 

- Substrates for Power Electronics

 

 
VR
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
High Thermal Conductivity Aln Aluminum Nitride Ceramic Wafer Substrate Plate for Power Resistor
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