• Aluminum Nitride Aln Amb Substrate with Copper
  • Aluminum Nitride Aln Amb Substrate with Copper
  • Aluminum Nitride Aln Amb Substrate with Copper
  • Aluminum Nitride Aln Amb Substrate with Copper
  • Aluminum Nitride Aln Amb Substrate with Copper
  • Aluminum Nitride Aln Amb Substrate with Copper

Aluminum Nitride Aln Amb Substrate with Copper

Application: Aerospace, Electronics, Medical, Vacuum Brazing
Material Composition: Alumina, Al2O3
Speciality: High Insulation, High Strength
Type: Insulating Ceramics
Compressive Strength: 2300MPa
Coating Thickness: 8-30μm
Manufacturer/Factory & Trading Company

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Fujian, China
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Basic Info.

Model NO.
AA INC-AMB20310
Coating Layer
Mo/Mn
Plated Layer
Nickel/Copper/Gold
Thermal Conductivity
25W/(M.K)
Plating Thickness
2-9μm
Max. Use Temperature
1600ºC
Density
3.7g/cm3
Transport Package
Standard Cartons with Foam
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China
Production Capacity
100000 Piece/Pieces Per Month

Product Description

 
Aluminum Nitride AMB Ceramic Substrate is a method to realize the bonding of ceramic and metal by reacting a small amount of active elements Ti and Zr in filler metal with ceramics to form a reaction layer which can be wetted by liquid filler metal.
 
Advantage:
* The combination is achieved by chemical reaction between ceramic and active metal solder paste at high temperature, so its bonding strength is higher and reliability is better;
* Could have different thickness of copper on one plate;
* Environmental frindly;
* Strong cold and heat resistance;
* Easy full automation, production efficiency high, low production cost;
* Copper thickness 0.1-0.5mm,very suitable for high power device packaging.
 
Specification
>Metallization thickness: 25 ±10um >Nickel thickness:2~10um; >Pin full strength: 4200kgf/cm2 avg. (at Φ3.0mm pin)
 
Material
Item
Value
 
 
 
 
 
 
Si3N4
Composition
96%SiN
 
Thickness (mm)
0.2,0.32,0.35,0.635,0.4-1.5
 
Density(g/cm3)
3.2±0.25
 
Thermal Conductivity (20°C, W/m·k)
85+
 
Flexural Strength (MPA)
700-800
 
Dielectric Constant (IMHz)
8
 
Dielectric loss (IMHz)
0.001
 
Dielectric Strength (KV/mm)
20
 
Volume Resistivity (Ω/CM)
1*1014
 
 
 
 
 
 
ALN
Composition
96%ALN
 
Thickness (mm)
0.25,0.32,0.635
 
Density(g/cm3)
3.3
 
Thermal Conductivity (20°C, W/m·k)
170+
 
Flexural Strength (MPA)
350
 
Dielectric Constant (IMHz)
9
 
Dielectric loss (IMHz)
0.0005
 
Dielectric Strength (KV/mm)
20
 
Volume Resistivity (Ω/CM)
1014
 
 
 
Copper
Material
Oxygen-free copper
 
Purity (%)
99.99
 
Hardness( HV)
60-110
 
Conductivity (MS/m)
58.6
 
Thickness (mm)
1.2,1.0,0.8,0.5,0.4,0.3,0.25,0.2
 
 
 
 
 
AMB Substrate
Largest size (mm)
190*140
 
Line Spacing (mm)
≥0.5
 
Line Width (mm)
customized
 
Peel strength of copper layer (minimum) (N/mm)
10
 
Solderability(%)
95%
 
Delivery method
Small pieces or panel
 
Surface states (um)
CU/AU/AG
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
 
VR
Aluminum Nitride Aln Amb Substrate with Copper
 
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
Aluminum Nitride Aln Amb Substrate with Copper
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