to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink

Product Details
Color: White,Ivory,Yellow,etc
Work Temp.: 1400 °c to 1900 °c
Metallization Thickness: 25+/-10um
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  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
  • to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
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Basic Info.

Model NO.
TO-3P/220/247/254/257/258/264
Plating Thickness
2-10um
Part No.
to 3p, to 220, to 247, to 254, to 257, to 258
Transport Package
Carton Packing
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China

Product Description

 
Product Name: TO-3P/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads
 
Application: for MOS Transistor IGBT Transistor Heat Sink Often used in electrical and electronic fields requiring heat conduction, heat dissipation, insulation, high temperature resistance,high voltage breakdown resistance, high thermal conductivity, good stability.
 
Product specifications: Conventional model is TO-3P/220/247/254/257/258/264
 
Product Advantages: Aluminum nitride ceramics have excellent thermal conductivity (7-10 times of alumina ceramics), low dielectric constant and dielectric loss, reliable insulation performance, excellent mechanical properties, non-toxic, high temperature resistance, chemical corrosion resistance, and the thermal expansion coefficient of silicon is similar, as a new generation of ceramic materials, more and more by people Attention and attention. Aluminum nitride ceramics produced by our company lead the quality of similar domestic products, with the international advanced level, widely used in communication devices, high brightness LED, power electronic devices and other industries.
 
Regular Size
For Package Type: TO-3P / TO-220 / TO-247 / TO-264 / TO-3/TO-254/TO-257/TO-258, with Hole or without Hole.
TO - 3P, 25*20*1mm (other thickness is available, too);
TO-220, 20*14*1mm (other thickness is available, too);
TO-247, 22*17*0.635mm (other thickness is available, too);
TO-264, 28*22*1mm (other thickness is available, too);
TO-3, 39.7*26.67*1mm (Rhombus shape);
TO-254, 34*24*1mm (other thickness is available, too);
TO-257, 40*28*1mm (other thickness is available, too);
TO-258, 50.8*50.8*1mm (other thickness is available, too);
Other standard sizes:
25.4*25.4mm;
114.3*114.3mm;
152*152mm;
190.5*138mm…..;

Customized sizes are available.
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
to-3p/220/247/254/257/258/264 Aluminum Nitride Ceramic Thermal Pads for Mosfet Transistor IGBT Transistor Heat Sink
 
 

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