Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper

Product Details
Application: Aerospace, Electronics, Medical, Amb Substrate
Compressive Strength: 2300MPa
Coating Thickness: 8-30μm
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  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
  • Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
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Basic Info.

Model NO.
AA INC-AMB Thick Film Substrate
Coating Layer
Copper
Plated Layer
Nickel/Copper/Gold
Thermal Conductivity
25W/(M.K)
Plating Thickness
2-9μm
Max. Use Temperature
1600ºC
Density
3.7g/cm3
Material Composition
Alumina, Al2O3
Speciality
High Insulation
Type
Insulating Ceramics
Transport Package
Standard Cartons with Foam
Trademark
INNOVACERA
Origin
Fujian, China
Production Capacity
10000 Piece/Pieces Per Month

Product Description

Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper

 

 
Active Metal Brazing Substrates is a technology by applying active metal alloy (Ag, Cu, Ti etc.) to the ceramic surface, the active elements such as Ti and Zr can react with ceramics to form a reaction layer that can be wetted by liquid solder, this allows metal to be joined to ceramic without metallization. This ceramic-to-metal joining owns a higher bonding strength and good reliability, in addition to its excellent mechanical property and good thermal conductivity, which are commonly used in high-power electronic applications such as IGBT and SIC module package.
 
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
 
Advantages:
1.High thermal conductivity
2.Excellent chemical stability
3.High heat dissipation
4.Copper thickness: ~0.8mm
5.Surface treatment: Ni/NiAu/Ag
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Ceramic Materials Properties
 
 
 
Item
Unit
Si3N4
AlN
Density
g/cm3
≥3.2
≥3.3
Thermal Conductivity
W/m·K
≥80
>170
Coefficient of Thermal Expansion
10-6/K
2.5 (20~300)
4.6 (20~300)
Flexural Strength
MPa
>700
>350
Dielectric Loss
x10-4 [1MHz]
10
3.8
Dielectric Constant
1MHz
8~9
9
Dielectric Strength
Kv/mm
-
17
Volume Resistivity
Ω·cm
>1014
>1014
Young's Modulus of Elasticity
GPa
300~310
320
Thickness
 
 
Thickness
Si3N4 Ceramic
Copper
0.25
 
0.3
 
0.32
 
0.5
0.8
1
 
Surface Finish
 
Plating Process
Thickness
Electroless Ni
2~8um (6%~10% P)
Electroless NiAu
Au: 0.01~0.1um; Ni: 2~8um
Electroless Ag
Ag: 0.1~0.6um
Tolerance
 
 
Item
Tolerance (mm)
 
Ceramic
WxD: ±1% (min.0.1mm) T: ±10%
 
Copper
Copperthickness: >0.3~0.5
±0.015
 
Copperthickness: >0.8~1.2
±0.035
Surface Roughness and Warpage
 
 
Item
Roughness
Warpage
Ceramic
0.2~0.8
≤0.25%
Copper
≤0.8
≤0.05%/25
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
 
VR
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
 
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
Aluminum Nitride Aln Ceramic Amb Thick Film Substrate with Copper
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