• Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
  • Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
  • Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
  • Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
  • Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
  • Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors

Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors

Application: Aerospace, Electronics, Medical, Vacuum Brazing
Material Composition: Alumina, Al2O3
Speciality: High Insulation
Type: Insulating Ceramics
Compressive Strength: 2300MPa
Coating Thickness: 8-30μm
Manufacturer/Factory & Trading Company

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Fujian, China
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Basic Info.

Model NO.
INC-DBC20310
Coating Layer
Mo/Mn
Plated Layer
Nickel/Copper/Gold etc.
Thermal Conductivity
25W/(M.K)
Plating Thickness
2-9μm
Max. Use Temperature
1600ºC
Density
3.7g/cm3
Specification
Customized
Trademark
INNOVACERA
Origin
Fujian, China

Product Description

Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
 
DBC ceramic substrate/for electronic heating devices/Innovacera
DBC(Direct Bonded Copper)tenique denotes a special process in which the copper foil and the al2o3 or AlN (one or both sides) are directly bonded under appropriate high temperature. The finished super-thin DBC substrate has excellent electrical isolation,high thermal conductivity, fine solderability and high bonding strength.It may be structured just lick PCB to get etched wiring and has high curreng loading capability .Therefore DBC ceramic substrates have become the base material of tuture for both the construction and the interconnection techniques of high power semiconductor electronic circuits and also have been the basis for "chip on boaed"technology which repre-sents the packaging trend in century.
 
DBC Features 
1.High mechanical strength,mechanically stable shape;high strength,fine thermal conductivity,excellent electrical isolation;good adhesion,corrosion resistant; 
2.Much better thermal cycling capabilities (up to 50000 cycles),high reliability;
3.May be structured just like PCB boards or IMS substrates to get etched wiring; 
4.No contamination,environmentally clean; 
5.Wide application temperature:-55 ~ 850; The thermal expansion coefficient is closed to that of silicon, so production technologies of power module are greatly simplified.
 
 
 
 
 
 
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Aluminium Nitride Material Properties
 
 
 
 
Properties
 
INC-AN180
INC-AN200
INC-AN220
Color
 
Gray
Gray
Beige
Main Content
 
96%ALN
96%ALN
97%ALN
Main Characteristics
 
High Thermal Conductivity,Excellent Plasma Resistance
 
 
Main Applications
 
Heat Dissipating Parts,Plasma Resistance Parts
 
 
Bulk Density
 
3.30
3.30
3.28
Water Absorption
 
0.00
0.00
0.00
Vickers Hardness(Load 500g)
 
10.00
9.50
9.00
Flexural Strength
 
>=350
>=325
>=280
Compressive Strength
 
2,500.00
2,500.00
-
Young' Modulus of Elasticity
 
320.00
320.00
320.00
Poisson's Ratio
 
0.24
0.24
0.24
Fracture Toughness
 
-
-
-
Coefficient Linear Thermal Expansion
40-400 degree Celsius
4.80
4.60
4.50
Thermal Conductivity
20 degree Celsius
180.00
200.00
220.00
Specific Heat
 
0.74
0.74
0.76
Thermal Shocking Resistance
 
-
-
-
Volume Resistivity
20 degree Celsius
>=10-14
>=10-14
>=10-13
Dielectric Strength
 
>=15
>=15
>=15
Dielectric Constant
1MHz
9.00
8.80
8.60
Loss Tangent
*10-4
5.00
5.00
6.00
Remark: The value is just for review, different using conditions will have a little difference.
 
 
 
 
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
Direct Bond Copper Aluminum Nitride Aln Ceramic Substrate for for Peltier Module and Semiconductors
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