| Application: | Semiconductors, Aerospace, Electronics, Medical, Vacuum Brazing |
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| Compressive Strength: | 2300MPa |
| Coating Thickness: | 8-30μm |
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DBC(Direct Bonded Copper)tenique denotes a special process in which the copper foil and the al2o3 or AlN (one or both sides) are directly bonded under appropriate high temperature. The finished super-thin DBC substrate has excellent electrical isolation,high thermal conductivity, fine solderability and high bonding strength.It may be structured just lick PCB to get etched wiring and has high curreng loading capability .Therefore DBC ceramic substrates have become the base material of tuture for both the construction and the interconnection techniques of high power semiconductor electronic circuits and also have been the basis for "chip on boaed"technology which repre-sents the packaging trend in century.
DBC Features
1.High mechanical strength,mechanically stable shape;high strength,fine thermal conductivity,excellent electrical isolation;good adhesion,corrosion resistant;
2.Much better thermal cycling capabilities (up to 50000 cycles),high reliability;
3.May be structured just like PCB boards or IMS substrates to get etched wiring;
4.No contamination,environmentally clean;
5.Wide application temperature:-55 ~ 850; The thermal expansion coefficient is closed to that of silicon, so production technologies of power module are greatly simplified.
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Aluminium Nitride Material Properties
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Properties
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INC-AN180
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INC-AN200
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INC-AN220
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Color
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Gray
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Gray
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Beige
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Main Content
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96%ALN
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96%ALN
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97%ALN
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Main Characteristics
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High Thermal Conductivity,Excellent Plasma Resistance
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Main Applications
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Heat Dissipating Parts,Plasma Resistance Parts
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Bulk Density
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3.30
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3.30
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3.28
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Water Absorption
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0.00
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0.00
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0.00
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Vickers Hardness(Load 500g)
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10.00
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9.50
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9.00
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Flexural Strength
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>=350
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>=325
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>=280
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Compressive Strength
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2,500.00
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2,500.00
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-
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Young' Modulus of Elasticity
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320.00
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320.00
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320.00
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Poisson's Ratio
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0.24
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0.24
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0.24
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Fracture Toughness
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-
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-
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-
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Coefficient Linear Thermal Expansion
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40-400 degree Celsius
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4.80
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4.60
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4.50
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Thermal Conductivity
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20 degree Celsius
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180.00
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200.00
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220.00
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Specific Heat
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0.74
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0.74
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0.76
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Thermal Shocking Resistance
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-
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-
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-
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Volume Resistivity
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20 degree Celsius
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>=10-14
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>=10-14
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>=10-13
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Dielectric Strength
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>=15
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>=15
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>=15
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Dielectric Constant
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1MHz
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9.00
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8.80
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8.60
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Loss Tangent
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*10-4
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5.00
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5.00
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6.00
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Remark: The value is just for review, different using conditions will have a little difference.
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